| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to etch a lower layer of a hard mask by using an F-based gas and a Br-based gas in a pattern forming process. An etch target layer is formed on a substrate. A hard mask nitride layer pattern is formed on the etch target layer. The etch target layer is etched by using the hard mask nitride layer pattern as an etch barrier, and using an etch gas including a mixing gas of an F-based gas and a Br-based gas. An etch target layer pattern is formed by etching the etch target layer. The etch target layer is composed of one selected from a Ti layer, a TiN layer, a tungsten layer or a polysilicon layer.</p> |
