METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING FUSE

摘要

A method for manufacturing a semiconductor device having a fuse is provided to prevent crack of an interlayer dielectric and fuse fail by using an anti-reflective coating with oxidation resistivity and good step coverage. A barrier layer with oxidation resistivity is formed on an interlayer dielectric of a substrate(100). A first metal film is formed on the barrier layer. An anti-reflective coating having oxidation resistivity is formed on the first metal film, wherein the anti-reflective coating is made of IrSiN. A first metal line(116) and a fuse(118) are formed by patterning the barrier layer, the anti-reflective coating and the first metal film. An insulating layer(120) is formed on the resultant structure. A second metal line is formed on the insulating layer to connect the first metal line. A passivation layer is then formed on the resultant structure.