发明名称 APPARATUS AND METHOD FOR INSPECTING OVERLAY PATTERN IN SEMICONDUCTOR DEVICE
摘要 <p>An apparatus and a method for inspecting an overlay pattern in a semiconductor device are provided to produce an overlay correction value from a plurality of overlay pattern images of a third image including a first and second images. A stage is used for supporting a wafer(100). A light source(400) generates first incident light and second incident light to be irradiated on the wafer. An optical module(200) projects a plurality of adjacent overlay patterns formed on the wafer by using first reflecting light and second reflecting light. An image pickup unit(300) obtains a first and second image signals corresponding to the overlay patterns. An image generation and combination unit(500) generates a first and second images corresponding to the overlay patterns by using the first and second image signals. The image generation and combination unit generates a third image by combining the first image with the second image. A reading unit(600) reads an error of the overlay patterns by using a position of an overlay pattern image extracted from the third image.</p>
申请公布号 KR20080087216(A) 申请公布日期 2008.10.01
申请号 KR20070029073 申请日期 2007.03.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, GYO HYUNG
分类号 H01L21/027 主分类号 H01L21/027
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