发明名称 |
Semiconductor based high resistance |
摘要 |
<p>The field of invention is in the area of MOS integrated circuits operating with very low currents in the weak inversion region or sub threshold. The method aims at providing linear resistor with a value in the multi-mega ohm range. In order to produce Silicon based high resistance value, the claimed invention provides a semiconductor resistance using MOS transistor comprising a gate, drain, source and body terminals wherein the body terminal is tied to the drain terminal, the voltage applied between the source and the gate defining the resistance value.</p> |
申请公布号 |
EP1976021(A1) |
申请公布日期 |
2008.10.01 |
申请号 |
EP20070104895 |
申请日期 |
2007.03.26 |
申请人 |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) |
发明人 |
BRAUER, ELISABETH;LEBLEBICI, YUSUF |
分类号 |
H01L29/8605 |
主分类号 |
H01L29/8605 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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