| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to effectively control CD(Critical Dimension) of a gate by forming a hard mask pattern with fine width using two-step wet cleaning processes. A conductive layer(208) is formed on a substrate(200) having a cell region and a peripheral region. A hard mask layer is formed on the conductive layer. A mask pattern is formed to expose the peripheral region. The exposed peripheral region is performed by firstly wet cleaning. The hard mask layer of the peripheral region is treated by a trimming process. A second wet cleaning process is performed to remove the mask pattern, thereby forming a fine hard mask pattern(214b). Then, a gate pattern(G) is formed by etching the conductive layer using the hard mask pattern.</p> |
