| 摘要 |
A method for forming a dual poly gate in a semiconductor device is provided to prevent a pin hole defect and an impurity ion loss by implanting impurities into a semiconductor layer with an ion diffusion method using a single source. A gate dielectric(302) is formed on a semiconductor substrate(300) having a first region(A) and a second region(B). A semiconductor layer(304) is deposited on the gate dielectric. A mask layer pattern exposing the semiconductor layer of the first region is formed. An ion diffusion process using a single source material is performed by using the mask layer pattern as an ion implantation mask to form an impurity region in the first semiconductor layer. A heat treatment process is performed on the semiconductor substrate to form a first conductive type semiconductor layer on the first region and a second conductive type semiconductor layer on the second region. A gate metal layer and a hard mask layer are formed on the semiconductor layer. The laminated layers are patterned to form a gate stack.
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