| 摘要 |
A field effect transistor structure is formed with a body semiconductor layer (5) having source (9), body (7), drift region and drain (11). An upper semiconductor layer (21) is separated from the body by an oxide layer (17). The upper semiconductor layer (21) is doped to have a gate region (23) arranged over the body (7), a field plate region (25) arranged over the drift region 13 and at least one p-n junction (26) forming at least one diode between the field plate region (25) and the gate region (23). A source contact (39) is connected to both the source (9) and the field plate region (25). |
