| 摘要 |
An MMIC 100 is a semiconductor device which includes an FET formed on a GaAs substrate 10 and an MIM capacitor having a dielectric layer 20b arranged between a lower electrode 18b and an upper electrode 22b. A method for manufacturing the MMIC 100 is provided, in which a source electrode 16a and a drain electrode 16b of the FET are formed and then a gate electrode 18a of the FET and a lower electrode 18b of the MIM capacitor are formed simultaneously by the lift-off method.
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