| 摘要 |
A method for forming an isolation layer of a semiconductor device is provided to reduce parasitic capacitance of a sidewall oxide layer by implanting SiCOH into a dielectric film. A hard mask pattern(108) is formed on a semiconductor substrate(102). A trench(T) is formed in the substrate by using the hard mask pattern. A dielectric film(110) is formed in the trench. The dielectric film is firstly baked. A rirst annealing process is performed to the baked dielectric film. A hydrocarbon based compound, such as SiCOH is implanted into the dielectric film. Then, the dielectric film is secondly annealed. The dielectric film is compound of a PZT(Poly Silazane) film.
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