| 摘要 |
This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the flux and/or cross sectional profile of the ion beam used for implantation. It is often desirable to measure the flux and/or cross sectional profile of an ion beam in an ion implanter in order to improve control of the ion implantation of a semi-conductor wafer. The present invention describes adapting the wafer holder 36 to allow such beam profiling to be performed. The substrate holder 36, with use of additional pieces 60, may be used progressively to occlude the ion beam 28 from a downstream flux monitor or a flux monitor (68, Fig. 9) may be located on the wafer holder that is provided with a slit entrance aperture (70). The measurement of flux profiles can also be used to determine the path of the ion beam. |
