LINE OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

An interconnection of a semiconductor device and a method for forming the same are provided to prevent the out-diffusion of metal components by using a Cr film as a diffusion barrier layer of a CrB2 and a seed layer of a metal line. An insulating layer(102) having a damascene pattern(D') is formed on a semiconductor substrate(100). A metal line(108) composed of a copper film is filled in the damascene pattern. A diffusion barrier layer(104) made of a CrB2 film is formed between the metal line and the insulating layer. A seed layer(106) is formed between the diffusion barrier layer and the metal line, and composed of a Cr film.