| 摘要 |
<P>PROBLEM TO BE SOLVED: To uniformly control residual stress or residual distortion in a wafer surface where the crystal of a semiconductor layer is grown while preventing the misregistration of the semiconductor layer in a semiconductor manufacturing process and its contamination, deterioration, deformation, etc. in a thermal treatment step. <P>SOLUTION: On a GaN layer 12 formed on the main surface of a sapphire substrate 11, light is irradiated from the back of the substrate, and thereby part of an area on the GaN layer 12 contacting the substrate is thermally decomposed to form a thermally decomposed layer 14. After that, while keeping the state of the sapphire substrate 11 and the GaN layer 12 being bonded, the thermally decomposed layer 14 is removed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
