| 摘要 |
Provided is a nitride semiconductor light emitting element, which has improved light extracting efficiency, irrespective of the reflection coefficient of a metal used for an electrode, and a wide irradiation angle of an output light. An n-side reflection preventing layer (2) and a p-side Bragg reflection layer (4) are formed to sandwich an MQW active layer (3) as a light emitting region, and a double hetero structure is formed. On the n-side reflection preventing layer (2), an n-electrode (1) is formed. A p-electrode (5), a reflection film (7) and a pad electrode (8) are formed on the lower side of the p-side Bragg reflection layer (4) and are connected with a supporting substrate (10) through a conductive connecting layer (9). The n-side reflection preventing layer (2) and the p-side Bragg reflection layer (4) also function as contact layers. Since the n-side reflection preventing layer (2) is arranged in a light extracting direction, and the p-side Bragg reflection layer (4) is arranged on the side opposite to the light extracting direction, the light extracting efficiency is improved.
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