发明名称 Resist pattern forming method and semiconductor device fabrication method
摘要 A photoresist film 12 is formed on a substrate 10 . In the photoresist film 12 , an opening 13 having higher hydrophilicity and higher affinity with a chemical liquid 16 for swelling the photoresist film at upper part of the sidewall is formed down to the substrate 10 . The chemical liquid 16 is reacted with the photoresist film 12 with the opening formed in to swell the photoresist film 16 to thereby reverse-taper the sidewall of the opening. Whereby the photoresist film having an opening diameter beyond a resolution of the photoresist material and the sidewall of the opening reverse-tapered can be easily formed.
申请公布号 US7429446(B2) 申请公布日期 2008.09.30
申请号 US20040804179 申请日期 2004.03.19
申请人 FUJITSU LIMITED 发明人 SAWADA KEN;MAKIYAMA KOZO
分类号 G03F7/26;G03F7/40;G03C5/00;G03F7/023;H01L21/027 主分类号 G03F7/26
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