LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES

摘要

A METHOD FOR FORMING AN OHMIC CONTACT TO SILICON CARBIDE FOR A SEMICONDUCTOR DEVICE COMPRISES IMPLANTING IMPURITY ATOMS INTO A SURFACE OF A SILICON CARBIDE SUBSTRATE THEREBY FORMING A LAYER ON THE SILICON CARBIDE SUBSTRATE HAVING AN INCREASED CONCENTRATION OF IMPURITY ATOMS, ANNEALING THE IMPLANTED SILICON CARBIDE SUBSTRATE, AND DEPOSITING A LAYER OF METAL ON THE IMPLANTED SURFACE OF THE SILICON CARBIDE. THE METAL FORMS AN OHMIC CONTACT "AS DEPOSITED" ON THE SILICON CARBIDE SUBSTRATE WITHOUT THE NEED FOR A POST-DEPOSITION ANNEAL STEP. (FIGURE 1)