| 摘要 |
The present invention provides a method of manufacturing a transistor device, a transistor device, and a method for manufacturing an integrated circuit. In one aspect, the method of manufacturing a transistor device includes providing a gate structure ( 140 ) over a substrate ( 110 ). An insulating layer ( 310 ) is formed over the gate structure ( 140 ), and openings ( 710 ) to the substrate ( 110 ) are formed therein, thereby removing a portion of the gate structure ( 140 ). The openings ( 710 ) are filled with a conductor ( 1410 ), thereby forming an interconnect ( 1510 ).
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