| 摘要 |
A semiconductor device including a sub-word line driver is provided to prevent previously latent failure caused by damage of a gate. A predetermined lower structure is formed on a semiconductor substrate. A first active region(14) is defined by an isolation layer(12) within the semiconductor substrate. A gate(16) is formed across the first active region and receives an inverse pre-decoding signal. A first contact plug(18) is formed to connect the gate with a first metal line. A second contact plug(20) is formed to connect the first metal line with a second metal line. A second active region(22) is electrically connected to the first metal line. The second active region is connected to the first metal line through a third metal line(24).
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