| 摘要 |
A one-transistor type DRAM is provided to increase efficiency of a sense amplifier by generating a reference voltage and a clamp voltage reflecting the characteristics of a main cell. According to a one-transistor type DRAM using a floating body storage device controlled by a word line as being connected between a bit line and a source line, a plurality of source lines and word lines are arranged in a row direction. A plurality of bit lines are arranged in a column direction. A plurality of clamp bit lines and reference bit lines are arranged in a column direction. A cell array(30) includes the floating body storage device, and is formed on a region where the source line, the word line and the bit line intersect with each other. A clamp cell array(20) includes the floating body storage device, and is formed on a region where the source line, the word line and the reference bit line intersect with each other. A reference cell array includes the floating body storage device, and is formed on a region where the source line, the word line and the reference bit line intersect with each other. A sense amplifier(S/A) and a write driving part(W/D) are connected to the bit line, and are applied with a clamp voltage and a reference voltage.
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