| 摘要 |
<p>Provided is a high-frequency semiconductor device, which has no drop of a cut-off frequency and few heat release problems. The high-frequency semiconductor device comprises two unit semiconductor devices each including an earthed substrate having a heat releasing function, a high-frequency semiconductor element disposed on the earthed substrate, an input-side matching circuit connected with the high-frequency semiconductor element, an output-side matching circuit connected with the high-frequency semiconductor element, side-wall portions enclosing at least the high-frequency semiconductor element, the input-side matching circuit and the output-side matching circuit, an input terminal connected with the input-side matching circuit, and an output terminal connected with the output-side matching circuit. The high-frequency semiconductor device is characterized in that the two unit semiconductor devices are adjusted to each other at the upper ends of the side-wall portions.</p> |
