发明名称 |
POWER LDMOS TRANSISTOR |
摘要 |
<p>POWER LDMOS TRANSISTOR A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a drain extension region of the first conductivity type are formed in the semiconductor layer. A body region of a second conductivity type is formed in the semiconductor layer. A conductive gate is formed over a gate dielectric layer that is formed over a channel region. A drain contact electrically connects the drain extension region to the substrate and is laterally spaced from the channel region. The drain contact includes a highly-doped drain contact region formed between the substrate and the drain extension region in the semiconductor layer, wherein a topmost portion of the highly-doped drain contact region is spaced from the upper surface of the semiconductor layer. A source contact electrically connects the source region to the body region.</p> |
申请公布号 |
SG145615(A1) |
申请公布日期 |
2008.09.29 |
申请号 |
SG20070191182 |
申请日期 |
2007.12.28 |
申请人 |
CICLON SEMICONDUCTOR DEVICE CORP. |
发明人 |
KOCON CHRISTOPHER BOGUSLAW;XU SHUMING;KOREC JACEK |
分类号 |
G06F12/14;G06F21/24;G11B7/005;G11B7/007;G11B20/00;G11B20/10;G11B20/12;H04N5/85;H04N5/91;H04N5/913 |
主分类号 |
G06F12/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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