发明名称 |
Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
摘要 |
A semiconductor wafer processing apparatus, particularly a CVD reactor, is provided with plasma cleaning electrodes integrated into process gas flow shaping structure that smoothly directs the gas past the wafer on a susceptor. The processing apparatus preferably has a showerhead or other inlet to direct a gas mixture onto a wafer and a plurality of baffles to reduce turbulence. Plasma cleaning electrodes are included in the baffles or the showerhead or both, one or more of which preferably have cleaning gas outlet orifices therein, preferably evenly distributed around the axis of the susceptor to provide uniform cleaning gas flow.
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申请公布号 |
US5273588(A) |
申请公布日期 |
1993.12.28 |
申请号 |
US19920898560 |
申请日期 |
1992.06.15 |
申请人 |
MATERIALS RESEARCH CORPORATION |
发明人 |
FOSTER, ROBERT F.;REBENNE, HELEN E.;LEBLANC, RENE E.;WHITE, CARL L.;ARORA, RIKHIT |
分类号 |
C23C16/14;C23C16/44;C23C16/455;C23C16/48;C23C16/54;H01J37/32;H01L21/00;H01L21/205;H01L21/31;H01L21/683;(IPC1-7):C23C16/50 |
主分类号 |
C23C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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