| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a contact hole non-open phenomenon by securely opening a landing plug contact hole during an etching process. A gate pattern(225) is formed on a semiconductor substrate(200), on which a device isolation film(205) is formed. A spacer layer(230) with a predetermined thickness is formed on an overall surface. A landing plug contact region between the gate patterns is buried, and a first interlayer dielectric pattern is formed to be higher than the gate pattern. A second interlayer dielectric(235) is formed on a resultant structure. An etching back process is performed, until the first interlayer dielectric pattern is exposed. The exposed first interlayer dielectric pattern is removed. The spacer layer is etched from the landing plug contact region, such that a landing plug contact hole is formed to expose the semiconductor substrate. The landing plug contact hole is buried to form a landing plug contact.
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