| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a conductive film for a sub-electrode from being slanted by forming a nitride film pad between passivation oxide film patterns. A passivation oxide film is formed on a semiconductor substrate(200), which includes a lower structure. The passivation oxide film is etched to form a passivation oxide film pattern(260a), which defines a capacitor electrode region. A conductive film(270) for a lower electrode is formed on an overall surface. The conductive film for the lower electrode is removed from the passivation oxide film pattern. A nitride film pad(280) is formed on the conductive film, such that the nitride film pad is apart from the semiconductor substrate surface by a predetermined distance. An overall surface etching process is performed, until the passivation oxide film is exposed and the nitride film pad is formed between the passivation oxide film patterns. The passivation oxide film is removed. The nitride film pad is removed, such that a cylinder type lower electrode is formed.
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