| 摘要 |
A mask rework method is provided to prevent a hardmask with silicon from being oxidized or damaged by supplying small power while removing a photoresist pattern and the hardmask layer with silicon. A first hardmask layer(32) containing carbon and a second hardmask layer containing silicon is formed on a layer to be etched(31). A photoresist pattern is formed on the second hardmask layer. The photoresist pattern, the second hardmask layer, and the first hardmask layer are removed. The second hardmask layer is removed by using fluorine-group gas. The first and second processes are repeatedly performed. The second hardmask layer removing process is performed by using the fluorine-group gas or a mixture of the fluorine-group gas and oxygen gas.
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