METHOD OF FORMING CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

A method of forming a capacitor in a semiconductor device is provided to prevent a lower node electrode from being slanted while mold and passivation films are removed, by using a capping film. A mold film with apertures is formed on a substrate(100). Conductive films for a lower electrode are formed on an inner sidewall, a bottom, and an upper surface of a mold film. A passivation pattern is formed to bury the apertures. A portion of the conductive film is removed, such that a cylindrical lower node electrode(118) is formed on the inner sidewall and bottom of the aperture. A capping film(120) covers the mold film, the passivation film pattern, and the lower node electrode. A wet-etching solution permeates into the capping film. The mold and passivation film patterns are removed by the wet-etching solution. The capping film is removed. A dielectric film and an upper electrode are sequentially formed on the lower node electrode and a substrate surface.