| 摘要 |
An ultraviolet light irradiation apparatus is provided to improve a hardening efficiency by a UV light with specific wavelength effective for hardening of a low dielectric film while solving a heat problem of high-pressure mercury lamps. An ultraviolet light irradiation apparatus for irradiating a semiconductor substrate with an ultraviolet light includes: a reactor(6) which has a substrate-support table within and comprises a light transmission window(5); an ultraviolet irradiation unit(18) which is connected with the reactor so as to irradiate the semiconductor substrate disposed on the substrate-support table having a UV light through the light transmission window, and comprises at least one UV lamp(3); and a liquid layer formation channel which is disposed between the UV lamp and the light transmission window to form a liquid layer capable of transmitting the UV light. The liquid layer formation channel is formed by the liquid flowing through the liquid layer formation channel.
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