| 摘要 |
Gettering layer (3a) is formed on the reverse side of silicon substrate (1) after initiation of device production process. Thereafter, gate (5) of MOS structure is formed on the main surface of the silicon substrate (1), and the gettering layer (3a) is removed. In the formation of the gate architecture of the MOS structure according to the above processing, any dissolved oxygen contained in the silicon substrate (1) is captured by the gettering layer (3a) to thereby lower the concentration of dissolved oxygen in the silicon substrate (1). As a result, there can be attained lowering of the concentration of dissolved oxygen in the silicon substrate (1) and thus desirable device characteristics.
|
