| 摘要 |
An apparatus for manufacturing high purity polycrystalline silicon and a method thereof are provided to allow a continuously stable supply of zinc gas as a reducing agent, thereby continuously manufacturing high purity polycrystalline silicon with low cost in large quantities by a compact structure. An apparatus for manufacturing high purity polycrystalline silicon includes a silicon chloride vaporizer, a zinc melting evaporator, a vertical reactor, a silicon chloride gas supply nozzle(2), a zinc gas supply nozzle(3), and an exhaust gas discharge pipe. The vertical reactor has a heater provided on a peripheral surface thereof. The zinc gas supply nozzle is disposed to connect the silicon chloride vaporizer to the vertical reactor, and provides silicon chloride gas from the silicon chloride vaporizer in the vertical reactor. The zinc gas supply nozzle is disposed to connect the zinc melting evaporator to the vertical reactor, and provides zinc gas from the zinc melting evaporator in the vertical reactor. The exhaust gas discharge pipe is connected to the vertical reactor.
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