发明名称 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
摘要 A method for manufacturing a polycrystalline silicon is provided to directly react an non-reacted reducing agent and a silicon particle contained in an exhaust gas consisting mainly of a reducing agent chloride gas produced as a by-product during manufacturing of a silicon from silicon chloride using a reducing method with chloride gas, in order to significantly reduce the amount of impurities contained in the by-product reducing agent chloride and to convert the reducing agent chloride into a form suitable for electrolysis. A method for manufacturing a polycrystalline silicon to perform a gas phase reaction of a silicon chloride gas(G) and a reducing agent gas in a reactor(1) includes the steps of: blowing a chlorine gas into an exhaust gas containing a reducing agent chloride gas produced as a by-product in the gas phase reaction and non-reacted gases to initiate a reaction; separating a reducing agent chloride(D) contained in the exhaust gas from other impurities; and reproducing the reducing agent chloride. The reaction initiated by blowing the chlorine gas into the exhaust gas is performed by blowing the chlorine gas into the exhaust gas from a chlorine gas introducing pipe provided in a chlorination reaction device connected with the reactor in which the gas phase reaction of the silicon chloride gas and the reducing agent gas is performed.
申请公布号 KR20080085715(A) 申请公布日期 2008.09.24
申请号 KR20080024273 申请日期 2008.03.17
申请人 CHISSO CORPORATION 发明人 HAYASHIDA SATOSHI
分类号 C30B29/06;C01B33/033 主分类号 C30B29/06
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