| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve sensitivity thereof by bonding a second substrate including a photodiode with a first substrate including circuits having lower wirings. A first substrate(10) having a circuit including a lower wiring is prepared. A photodiode(70) including a first impurity region(71) and a second impurity region(72) is formed on a crystalline region of the first substrate. A first contact(81) and a second contact(82) penetrate the photodiode in order to be connected to the lower wiring. The first and second contacts are formed apart from each other. The first contact comes in contact with the first impurity region. The second contact comes in contact with the second impurity region.
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