| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent the characteristic change of a transistor by performing an annealing process for a metal barrier layer using a bit line tungsten layer as a heat source upon forming of a titanium silicide(TiSix) layer. Interlayer dielectrics(22,26) on which bit line contact holes are formed are formed on an upper portion of a semiconductor substrate(10). A metal barrier layer(34) and a bit line electrode layer are formed on an upper portion including the bit line contact holes. A constant voltage is applied to the bit line electrode layer to perform heat treatment on the metal barrier layer. A bit line hard mask layer is formed on an upper portion of the bit line electrode layer and is patterned to form a bit line. A thickness of the interlayer dielectric is 1000 to 5000 Å. The metal barrier layer is a laminated structure of a titanium(Ti) layer(30) and a titanium nitride(TiN) layer(32). A thickness of the titanium(Ti) layer is 50 to 200 Å. A thickness of the titanium nitride(TiN) layer is 50 to 500 Å.</p> |
