| 摘要 |
<p>A method for forming transistor is provided to increase a channel length of the transistor by forming a swollen region on an active region. An isolation layer(4) defining an active region(2) is formed on an upper portion of a semiconductor substrate on which a predetermined lower structure is formed. A swollen region is formed on the active region. A gate is formed on an upper portion of the isolation layer and the swollen region of the active region. When the swollen region is formed on the active region, a blocking region is formed on a predetermined region of the active region. The swollen region is formed on the active region opened by the blocking layer. When the blocking layer is formed, a nitride layer(6) is formed on a predetermined region of the active region. A spacer(8) is formed on a sidewall of the nitride layer. An SEG(Self Epitaxial Growing) process is performed to form the swollen region on the active region.</p> |
