发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming an electrode penetrating an integrated circuit chip from the surface to the rear surface in order to mount three or more integrated circuit chips directly on a circuit board while stacking. <P>SOLUTION: A thin conductive semiconductor substrate is bored by etching and a photosensitive polyimide insulation film is deposited thereon by rotary coating. A pattern of holes of smaller diameter is then formed by exposure and development, the through hole is filled with a metallic material, and the rear surface of the substrate is ground to expose the metal thus forming a through electrode. The inventive through electrode has such a structure as a polyimide insulation layer is formed on the side face of a through hole made through a substrate of ground potential and the center of the hole is filled with a metallic material. Since a coaxial line structure is attained, a wide range characteristic impedance can be realized by controlling the thickness of the polyimide insulation film on the side face of the hole. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP4154478(B2) 申请公布日期 2008.09.24
申请号 JP20020042756 申请日期 2002.02.20
申请人 发明人
分类号 G03F7/027;H01L21/3205;G03F7/037;H01L23/52;H01L25/065;H01L25/07;H01L25/18 主分类号 G03F7/027
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