ENVIRONMENTALLY ROBUST PASSIVATION STRUCTURES FOR HIGH-VOLTAGE SILICON CARBIDE SEMICONDUCTOR DEVICES,申请号EP20060847921-传众专利搜索

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发明名称	ENVIRONMENTALLY ROBUST PASSIVATION STRUCTURES FOR HIGH-VOLTAGE SILICON CARBIDE SEMICONDUCTOR DEVICES
摘要
申请公布号	EP1972013(A2)	申请公布日期	2008.09.24
申请号	EP20060847921	申请日期	2006.12.21
申请人	US	发明人	US;US
分类号	H01L29/24;H01L21/04;H01L21/314;H01L21/318;H01L29/40;H01L29/732;H01L29/74;H01L29/78;H01L29/868;H01L29/872	主分类号	H01L29/24
代理机构		代理人
主权项
地址

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