| 摘要 |
A method for forming a gate of a semiconductor device is provided to prevent the increment of a line width of a gate and the tilt of the gate by forming a capping nitride layer through a plasma nitride process. A gate dielectric, a poly silicon layer(204), a barrier layer(206), a tungsten layer(208), and a hard mask layer(210) are formed in turn on a semiconductor substrate(200). The hard mask layer, the tungsten layer, and the barrier layer are etched. A tungsten nitride layer is formed on a sidewall of the etched tungsten layer through a nitration process. The poly silicon layer and the gate dielectric are etched by using the tungsten layer and the etched hard mask layer as etch masks. A gate re-oxidization process is performed to remove an etch damage generated during etching processes. Before the gate dielectric is formed on the semiconductor substrate, a groove(H) is formed in the semiconductor substrate.
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