发明名称 METHOD OF MEASURING THE RATIO OF VOLTAGE TO CURRENT IN TRANSISTOR
摘要 A method for measuring a ratio of voltage to current in a transistor is provided to suppress the generation of degradation by applying a discontinuous voltage to a drain electrode of the transistor. A voltage value setting process is performed to set an upper limit and a lower limit of a voltage to be supplied to a train terminal of a transistor. A voltage block between the upper limit and the lower limit is divided into a plurality of sub-voltage blocks. The voltage supplied to the drain terminal is gradually boosted from the lower limit to the upper limit. The voltage supplied to the drain terminal is gradually dropped from the upper limit to the lower limit. An intersection detection process is performed to detect an intersection between a curve of drain voltage to drain current in the voltage boosting process and a curve of drain voltage to drain current in the voltage dropping process. A ratio of voltage to current in a transistor is produced by using the curve.
申请公布号 KR20080085516(A) 申请公布日期 2008.09.24
申请号 KR20070027174 申请日期 2007.03.20
申请人 LG DISPLAY CO., LTD. 发明人 CHOI, KEE JOON
分类号 G01R19/165 主分类号 G01R19/165
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