发明名称 MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC LAMINATION STRUCTURAL BODY, AND MANUFACTURE METHOD FOR MAGNETIC LAMINATION STRUCTURAL BODY
摘要 A magnetoresistance effect device, a magnetic lamination structural body, and a manufacture method of the magnetic lamination structural body are provided to reduce the combined magnetic field in a free layer by enhancing the surface flatness of a pinning layer. A magnetoresistance effect device comprises a base layer, a pinning layer(3), a reference layer(4c), a non-magnetic layer, and a free layer. The base layer placed on a main surface of a substrate(1) is made of NiFeN. The pinning layer placed on the base layer is made of a non-magnetic material. The reference layer placed on the pinning layer is made of a ferromagnetic material fixing the magnetization by reacting with the pinning layer. The non-magnetic layer is made of a non-magnetic material placed on the reference layer. The free layer placed on the non-magnetic layer is made of a ferromagnetic material varying the magnetization due to an external magnetic field.
申请公布号 KR20080085771(A) 申请公布日期 2008.09.24
申请号 KR20080025486 申请日期 2008.03.19
申请人 FUJITSU LIMITED 发明人 IBUSUKI TAKAHIRO;SATO MASASHIGE;UMEHARA SHINJIRO
分类号 G11B5/39 主分类号 G11B5/39
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