| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent defects of the semiconductor device by correcting an error value of an alignment pattern of an epitaxial layer. An alignment pattern is formed on a semiconductor substrate(110) by performing an etch process using a mask. An implant layer(130) is formed on an entire surface of the semiconductor substrate including the alignment pattern by performing a high-density implant process. An epitaxial layer(140) is formed on the semiconductor substrate. A sectional surface of the semiconductor substrate is exposed by cutting the semiconductor substrate including the implant layer and the epitaxial layer. The sectional surface of the semiconductor substrate is etched by using a mixing solution including NH4F and HF.</p> |
