| 摘要 |
<p>A method for forming a pattern in a semiconductor device is provided to increase an etch selectivity between hard masks by interposing hard masks containing carbon and silicon between an etch target layer and a photo resist through a coating manner. A first hard mask(22) containing carbon is formed on an etch target layer. A second hard mask containing carbon is formed on the first hard mask. The second hard mask is oxidized. A photoresist pattern(25) is formed on the oxidized second hard mask(23A). The second hard mask is etched by using the photoresist pattern as a mask. The first hard mask is etched by using the etched second hard mask as an etch barrier. The etch target layer is etched by using the first hard mask as an etch barrier. During the first hard mask is formed, a polymer layer containing carbon is coated on the etch target layer, and the baking process is performed on the resultant structure. After the polymer layer is coated, an EBR(Edge Bead Removal) process is further performed.</p> |
