| 摘要 |
PROBLEM TO BE SOLVED: To avoid a great stress due to heat treatment for forming semiconductor layers by bonding. SOLUTION: The method comprises a step for laminating a second semiconductor layer laid with a second adhesive layer 2 formed on a Gap substrate 1, on a first semiconductor layer 14 composed of semiconductor layers 17, 16, 8-3 formed on a GaAs substrate 12, then first heat treating at 350-400 deg.C to mutually adhere bonding interfaces. Hereafter, the GaAs substrate 12 is removed and secondly heat treating at 700-800 deg.C. The first heat treatment is at low temperatures enough to reduce stress occurring in the GaAs substrate 12 and the Gap substrate 1, and removing the former substrate 12 prior to the second heat treatment reduces stress occurring in the Gap substrate 1 to result in tightly adhered bonding interfaces. |
