OPTICAL SEMICONDUCTOR DEVICE HAVING DOUBLE HETEROSTRUCTURE TO REDUCING CURRENT LEAKAGE AND FABRICATING METHOD THEREOF,申请号KR20070011242-传众专利搜索

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发明名称	OPTICAL SEMICONDUCTOR DEVICE HAVING DOUBLE HETEROSTRUCTURE TO REDUCING CURRENT LEAKAGE AND FABRICATING METHOD THEREOF
摘要
申请公布号	KR100860187(B1)	申请公布日期	2008.09.24
申请号	KR20070011242	申请日期	2007.02.02
申请人		发明人
分类号	H01L33/00;H01L33/14;H01L33/02	主分类号	H01L33/00
代理机构		代理人
主权项
地址

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