发明名称 Active matrix display substrate having tailored subpixel auxiliary capacitances according to colour
摘要 <p>In colour active matrix LCDs, the kickback voltages V kb (also called feed-through voltages) may be different between pixels of a different colour. At low grey scale voltages, the kickback voltage (the drop in the voltage applied to the liquid crystal pixel at gate turn-off) becomes particularly significant: differences in the kickback voltages result in differences in the gamma voltages applied to those pixels, causing an undesirable colour shift. To equalise the kickback voltages and remove the colour shift, the pixel capacitances C st or C gs , on which the kickback voltages depend, are individually tailored for each colour. The storage capacitance C st is formed between the storage electrode (STE) and the pixel electrode (130). The dielectric is formed by a gate insulating layer (113). an overcoat layer (116) and a colour filter layer (120)- which is located on the thin film transistor substrate (140). The pixel electrode contacts the overcoat layer via a contact hole (STH) through the colour filter layer. The colour filter only contributes to the C st dielectric at the sides of the contact hole. The C st can be changed by either varying the STE area, the area of the opening of the contact hole over the STE or both. Alternatively, the parasitic gate, source capacitance C gs can be changed, either by changing the length of the source electrode (SE) which overlaps the gate electrode (GE) in the TFT itself of by providing a protrusion (SEC) from the source electrode which overlaps the gate line (DL) by a different amount.</p>
申请公布号 EP1972989(A2) 申请公布日期 2008.09.24
申请号 EP20080003999 申请日期 2008.03.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, KYOUNG-JU;KIM, SHI-YUL;KIM, JANG-SOO
分类号 G02F1/1362;G09G3/36 主分类号 G02F1/1362
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