发明名称 Integrated resistor capacitator structure
摘要 <p>A resistor capacitor structure and a method of fabrication. A resistor capacitor structure provides a capacitance between at least two nodes within a microelectronic circuit. A bottom plate of the resistor capacitor structure comprises a resistance layer, which in turn provides a resistance path between an additional node within the circuit. The resistor capacitor structure may be formed on top or within interlevel dielectric layers. The resistance layer, alternatively, may be used to fill a cavity located between iiiterlevel dielectric layers and accordingly provide a resistance path between the interlevel dielectric layers.</p>
申请公布号 EP1973159(A2) 申请公布日期 2008.09.24
申请号 EP20080102857 申请日期 2008.03.21
申请人 HONEYWELL INTERNATIONAL INC. 发明人 FECHNER, PAUL S.;SHAW, GORDON A.
分类号 H01L23/522 主分类号 H01L23/522
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