| 发明名称 |
Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy |
| 摘要 |
Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
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| 申请公布号 |
US7427555(B2) |
申请公布日期 |
2008.09.23 |
| 申请号 |
US20050537385 |
申请日期 |
2005.06.03 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;THE JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
HASKELL BENJAMIN A.;FINI PAUL T.;MATSUDA SHIGEMASA;CRAVEN MICHAEL D.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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