| 摘要 |
A method of manufacturing a solid-state image pickup device comprises a process for forming a plurality of photoelectric conversion elements PD within a semiconductor substrate 4 , a process for forming an interconnection portion, having an interconnection layer 8 in an insulating layer 7 , on the surface side of the semiconductor substrate 4 , a process for forming an adhesive layer, made of a material cured at a temperature lower than a deterioration starting temperature of the interconnection layer 8 , on the surface of the interconnection portion and bonding a supporting substrate 30 to the surface side of the interconnection portion through the adhesive layer 9 by heat treatment at a temperature lower than the deterioration starting temperature of the interconnection layer 8 and a process for decreasing a thickness of the semiconductor substrate 4 from the back side. A solid-state image pickup device manufacturing method can bond the supporting substrate 30 to the surface side of the interconnection portion through the adhesive layer 9 without exerting a thermal influence upon the interconnection layer 8 that was previously formed on the surface side of the semiconductor substrate 4.
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