| 摘要 |
An image sensor is provided to secure high optical efficiency with respect to a photodiode by integrating the photodiode and a thin film transistor. A substrate(110) includes a first region(A1) and a second region(A2). A transistor is formed in the first region and a photodiode is formed in the second region. An active layer(210) including a polysilicon layer is formed on the substrate. A transistor includes drain, source, and drain regions(211,212,213) formed on the active layer of the first region, a gate electrode(230) formed on a gate insulating layer(220) of a channel region, and drain and source electrodes(251,252) formed on an interlayer dielectric(240). A photodiode is formed on the active layer of the second region and includes a P region(215) doped with a P type impurity, an intrinsic I region(216) doped with Erbium, and an N region(217) doped with an N type impurity. The drain region, the source region, the channel region, the P region, the I region, and the N region are arranged in parallel to each other on the active layer.
|
