发明名称 |
Trench memory cells with buried isolation collars, and methods of fabricating same |
摘要 |
The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar. The trench capacitor is located in a trench in a semiconductor substrate, and it comprises inner and outer electrodes and a dielectric layer. The buried isolation collar is recessed into a sidewall of the trench and has a substantially uniform thickness. Such a buried isolation collar is preferably formed by oxygen implantation before trench etching.
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申请公布号 |
US7427545(B2) |
申请公布日期 |
2008.09.23 |
申请号 |
US20050164381 |
申请日期 |
2005.11.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;MANDELMAN JACK A. |
分类号 |
H01L21/76;H01L21/44 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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