发明名称 Electronic element including ferroelectric substance film and method of manufacturing the same
摘要 A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.
申请公布号 US7427515(B2) 申请公布日期 2008.09.23
申请号 US20050093202 申请日期 2005.03.30
申请人 FUJITSU LIMITED 发明人 KONDO MASAO;KURIHARA KAZUAKI
分类号 G02F1/035;H01L29/72;G02F1/295;H01L21/28;H01L21/8246;H01L27/105;H01L29/51;H01L29/76;H01L29/78;H01L41/09;H01L41/187;H01L41/22;H03H3/08;H03H9/145 主分类号 G02F1/035
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