| 摘要 |
A thin film transistor substrate structure of the present invention comprises a gate and a common lines formed from a first conductive layer; a data line formed from a second conductive layer and intersecting the gate and common lines, the data line insulated from the gate and common lines by a gate insulating film, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor at the intersection; an extended portion of a common electrode in the pixel area; a pixel electrode formed from a third conductive layer connected to the thin film transistor and having an extended portion in the pixel area, a horizontal electric field formed by the pixel and common electrodes; and a plurality of pixel holes are defined, wherein the pixel electrode is disposed within at least one pixel hole and connected to a drain electrode.
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