发明名称 |
Methods of fabricating semiconductor devices including trench device isolation layers having protective insulating layers and related devices |
摘要 |
A method of fabricating a semiconductor device includes forming an active region including opposing sidewalls and a surface therebetween protruding from a substrate. A protective insulating layer is formed on the sidewalls of the active region, and extends away from the substrate to beyond the surface of the active region. A device isolation layer is also formed on the opposing sidewalls of the active region, and extends along the protective insulating layer to beyond the surface of the active region. As such, the protective insulating layer may protect portions of the device isolation layer extending therealong during subsequent fabrication processes. Related devices are also discussed.
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申请公布号 |
US7427533(B2) |
申请公布日期 |
2008.09.23 |
申请号 |
US20060443237 |
申请日期 |
2006.05.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WOOK-HYOUNG;KIM JAE-HOON |
分类号 |
H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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